Landauer-QFLPS Model for Mixed Schottky-Ohmic Contact Two-Dimensional Transistors.

Autor: Yan ZY; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Hou Z; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Xue KH; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Tian H; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Lu T; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Xue J; Department of Chemistry, Tsinghua University, Beijing, 100084, China., Wu F; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Zhao R; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Shao M; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Yan J; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Yan A; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Wang Z; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Shen P; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Zhao M; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Miao X; School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.; Hubei Yangtze Memory Laboratories, Wuhan, 430205, China., Lin Z; Department of Chemistry, Tsinghua University, Beijing, 100084, China., Liu H; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Yang Y; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China., Ren TL; School of Integrated Circuits, Tsinghua University, Beijing, 100084, China.; Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China.
Jazyk: angličtina
Zdroj: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2023 Dec; Vol. 10 (34), pp. e2303734. Date of Electronic Publication: 2023 Oct 09.
DOI: 10.1002/advs.202303734
Abstrakt: Two-dimensional material-based field-effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, before electronic design automation (EDA) for 2DM-FETs can be achieved, it remains necessary to determine how to incorporate contact transports into model. Reported methods compromise between physical intelligibility and model compactness due to the heterojunction nature. To address this, quasi-Fermi-level phase space theory (QFLPS) is generalized to incorporate contact transports using the Landauer formula. It turns out that the Landauer-QFLPS model effectively overcomes the issue of concern. The proposed new formula can describe 2DM-FETs with Schottky or Ohmic contacts with superior accuracy and efficiency over previous methods, especially when describing non-monotonic drain conductance characteristics. A three-bit threshold inverter quantizer (TIQ) circuit is fabricated using ambipolar black phosphorus and it is demonstrated that the model accurately predicts circuit performance. The model could be very effective and valuable in the development of 2DM-FET-based integrated circuits.
(© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.)
Databáze: MEDLINE
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