| Autor: |
Perez C; Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States.; Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States., McLeod AJ; Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093, United States., Chen ME; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States., Yi SI; Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, United States., Vaziri S; Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States., Hood R; Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States., Ueda ST; Materials Science and Engineering Program, University of California San Diego, La Jolla, California 92093, United States., Bao X; Taiwan Semiconductor Manufacturing Company, San Jose, California 95134, United States., Asheghi M; Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States., Park W; Division of Mechanical Systems Engineering, Sookmyung Women's University, Seoul 04310, South Korea., Talin AA; Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States., Kumar S; Materials Physics, Sandia National Laboratories, Livermore, California 94550, United States., Pop E; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States.; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Kummel AC; Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093, United States., Goodson KE; Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States.; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States. |
| Abstrakt: |
Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent thermal conductivity, but high-quality films typically require exceedingly hot deposition temperatures (>1000 °C). For thermal management applications in dense or high-power integrated circuits, it is important to deposit heat spreaders at low temperatures (<500 °C), without affecting the underlying electronics. Here, we demonstrate 100 nm to 1.7 μm thick AlN films achieved by low-temperature (<100 °C) sputtering, correlating their thermal properties with their grain size and interfacial quality, which we analyze by X-ray diffraction, transmission X-ray microscopy, as well as Raman and Auger spectroscopy. Controlling the deposition conditions through the partial pressure of reactive N 2 , we achieve an ∼3× variation in thermal conductivity (∼36-104 W m -1 K -1 ) of ∼600 nm films, with the upper range representing one of the highest values for such film thicknesses at room temperature, especially at deposition temperatures below 100 °C. Defect densities are also estimated from the thermal conductivity measurements, providing insight into the thermal engineering of AlN that can be optimized for application-specific heat spreading or thermal confinement. |
