C- and O-Band Dual-Polarization Fiber-to-Chip Grating Couplers for Silicon Nitride Photonics.

Autor:	Kohli M; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Chelladurai D; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Vukovic B; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Moor D; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Bisang D; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Keller K; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Messner A; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Buriakova T; Ligentec SA, 1024 Ecublens, Switzerland., Zervas M; Ligentec SA, 1024 Ecublens, Switzerland., Fedoryshyn Y; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Koch U; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland., Leuthold J; ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland.; Ligentec SA, 1024 Ecublens, Switzerland.
Jazyk:	angličtina
Zdroj:	ACS photonics [ACS Photonics] 2023 Aug 30; Vol. 10 (9), pp. 3366-3373. Date of Electronic Publication: 2023 Aug 30 (Print Publication: 2023).
DOI:	10.1021/acsphotonics.3c00834
Abstrakt:	Highly efficient coupling of light from an optical fiber to silicon nitride (SiN) photonic integrated circuits (PICs) is experimentally demonstrated with simple and fabrication-tolerant grating couplers (GC). Fully etched amorphous silicon gratings are formed on top of foundry-produced SiN PICs in a back-end-of-the-line (BEOL) process, which is compatible with 248 nm deep UV lithography. Metallic back reflectors are introduced to enhance the coupling efficiency (CE) from -1.11 to -0.44 dB in simulation and from -2.2 to -1.4 dB in experiments for the TE polarization in the C-band. Furthermore, these gratings can be optimized to couple both TE and TM polarizations with a CE below -3 dB and polarization-dependent losses under 1 dB over a wavelength range of 40 nm in the O-band. This elegant approach offers a simple solution for the realization of compact and, at the same time, highly efficient coupling schemes in SiN PICs. Competing Interests: The authors declare no competing financial interest. (© 2023 The Authors. Published by American Chemical Society.)
Databáze:	MEDLINE
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