Self-Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices.

Autor: Patil PP; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India., Kundale SS; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India., Patil SV; Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea., Sutar SS; Yashwantrao Chavan School of Rural Development, Shivaji University, Kolhapur, 416004, India., Bae J; Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea., Kadam SJ; Department of Mechanical Engineering, Bharati Vidyapeeth's College of Engineering, Kolhapur, 416013, India., More KV; Department of Chemistry, Shivaji University, Kolhapur, 416012, India., Patil PB; Department of Physics, The New College, Shivaji University, Kolhapur, 416012, India., Kamat RK; Department of Electronics, Shivaji University, Kolhapur, 416004, India.; Institute of Science, Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai, 400032, India., Lee S; Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea., Dongale TD; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India.
Jazyk: angličtina
Zdroj: Small (Weinheim an der Bergstrasse, Germany) [Small] 2023 Nov; Vol. 19 (46), pp. e2303862. Date of Electronic Publication: 2023 Jul 14.
DOI: 10.1002/smll.202303862
Abstrakt: In recent years, many metal oxides have been rigorously studied to be employed as solid electrolytes for resistive switching (RS) devices. Among these solid electrolytes, lanthanum oxide (La 2 O 3 ) is comparatively less explored for RS applications. Given this, the present work focuses on the electrodeposition of La 2 O 3 switching layers and the investigation of their RS properties for memory and neuromorphic computing applications. Initially, the electrodeposited La 2 O 3 switching layers are thoroughly characterized by various analytical techniques. The electrochemical impedance spectroscopy (EIS) and Mott-Schottky techniques are probed to understand the in situ electrodeposition, RS mechanism, and n-type semiconducting nature of the fabricated La 2 O 3 switching layers. All the fabricated devices exhibit bipolar RS characteristics with excellent endurance and stable retention. Moreover, the device mimics the various bio-synaptic properties such as potentiation-depression, excitatory post-synaptic currents, and paired-pulse facilitation. It is demonstrated that the fabricated devices are non-ideal memristors based on double-valued charge-flux characteristics. The switching variation of the device is studied using the Weibull distribution technique and modeled and predicted by the time series analysis technique. Based on electrical and EIS results, a possible filamentary-based RS mechanism is suggested. The present results assert that La 2 O 3 is a promising solid electrolyte for memory and brain-inspired applications.
(© 2023 Wiley-VCH GmbH.)
Databáze: MEDLINE
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