Light-Induced Bipolar Photoresponse with Amplified Photocurrents in an Electrolyte-Assisted Bipolar p-n Junction.

Autor: Fang S; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Li L; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Wang W; Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, P. R. China., Chen W; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Wang D; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Kang Y; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Liu X; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Jia H; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Luo Y; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Yu H; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Memon MH; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China., Hu W; Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, P. R. China., Ooi BS; Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE), King Abdullah University of Science and Technology, 21534, Thuwal, Saudi Arabia., He JH; Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China., Sun H; School of Microelectronics, University of Science and Technology of China, Hefei, 230026, P. R. China.; The CAS Key Laboratory of Wireless-Optical Communications, University of Science and Technology of China, 230027, Hefei, P. R. China.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2023 Jul; Vol. 35 (28), pp. e2300911. Date of Electronic Publication: 2023 Apr 20.
DOI: 10.1002/adma.202300911
Abstrakt: The p-n junction with bipolar characteristics sets the fundamental unit to build electronics while its unique rectification behavior constrains the degree of carrier tunability for expanded functionalities. Herein, a bipolar-junction photoelectrode employed with a gallium nitride (GaN) p-n homojunction nanowire array that operates in electrolyte is reported, demonstrating bipolar photoresponse controlled by different wavelengths of light. Significantly, with rational decoration of a ruthenium oxides (RuO x ) layer on nanowires guided by theoretical modeling, the resulting RuO x /p-n GaN photoelectrode exhibits unambiguously boosted bipolar photoresponse by an enhancement of 775% and 3000% for positive and negative photocurrents, respectively, compared to the pristine nanowires. The loading of the RuO x layer on nanowire surface optimizes surface band bending, which facilitates charge transfer across the GaN/electrolyte interface, meanwhile promoting the efficiency of redox reaction for both hydrogen evolution reaction and oxygen evolution reaction which corresponds to the negative and positive photocurrents, respectively. Finally, a dual-channel optical communication system incorporated with such photoelectrode is constructed with using only one photoelectrode to decode dual-band signals with encrypted property. The proposed bipolar device architecture presents a viable route to manipulate the carrier dynamics for the development of a plethora of multifunctional optoelectronic devices for future sensing, communication, and imaging systems.
(© 2023 Wiley-VCH GmbH.)
Databáze: MEDLINE
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