First-Principles Investigations of Thermoelectric Behavior of RuCrX (X = Si, Ge, Sn).
Autor: | Asif M; Department of Physics, COMSATS University Islamabad, Lahore Campus, Lahore, 54000, Pakistan., Alrashdi AO; King Abdulaziz City for Science and Technology, Riyadh, 11442, Saudi Arabia., Fadhali MM; Department of Physics, Faculty of Science, Jazan University, Jazan, 45142, Saudi Arabia.; Department of Physics, Faculty of Science, Ibb University, Ibb, 70270Yemen., Afaq A; Centre of Excellence in Solid State Physics, University of the PunjabLahore, 54000, Pakistan., Bakar A; Centre of Excellence in Solid State Physics, University of the PunjabLahore, 54000, Pakistan. |
---|---|
Jazyk: | angličtina |
Zdroj: | ACS omega [ACS Omega] 2022 Dec 02; Vol. 7 (49), pp. 45353-45360. Date of Electronic Publication: 2022 Dec 02 (Print Publication: 2022). |
DOI: | 10.1021/acsomega.2c05928 |
Abstrakt: | The half-Heusler alloys have not only been recognized for spintronic and memory devices but also for thermoelectric applications. In this research work, the detailed study for thermoelectric parameters of RuCrX (X = Si, Ge, Sn) half-Heusler alloys has been carried out by using the pseudopotential approach alongside the Boltzmann transport theory. The RuCrX (X= Si, Ge, Sn) was reported stable in C 1 Competing Interests: The authors declare no competing financial interest. (© 2022 The Authors. Published by American Chemical Society.) |
Databáze: | MEDLINE |
Externí odkaz: |