| Autor: |
Yu W; Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia.; Songshan Lake Materials Laboratory, Guangdong 523000, P. R. China.; Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China., Dong Z; School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China.; CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China., Mu H; Songshan Lake Materials Laboratory, Guangdong 523000, P. R. China., Ren G; School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia., He X; Songshan Lake Materials Laboratory, Guangdong 523000, P. R. China., Li X; Songshan Lake Materials Laboratory, Guangdong 523000, P. R. China., Lin S; Songshan Lake Materials Laboratory, Guangdong 523000, P. R. China., Zhang K; CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, P. R. China., Bao Q; Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia.; Nanjing kLIGHT Laser Technology Co. Ltd., Nanjing, Jiangsu 210032, China., Mokkapati S; Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia. |
| Abstrakt: |
Type-II Dirac semimetal platinum ditelluride (PtTe 2 ) is a promising functional material for photodetectors because of its specially tilted Dirac cones, strong light absorption, and high carrier mobilities. The stack of two-dimensional (2D) Dirac heterostructures consisting of PtTe 2 and graphene could overcome the limit of detection range and response time occurring in the heterostructures of graphene and other low-mobility and large-gap transition metal dichalcogenides (TMDs). Here, we report an approach for achieving highly controllable, wafer-scale production of 2D Dirac heterostructures of PtTe 2 /graphene with tunable thickness, variable size, and CMOS compatibility. More importantly, the optimized recipes achieve the exact stoichiometric ratio of 1:2 for Pt and Te elements without contaminating the underlayer graphene film. Because of the built-in electric field at the junction area, the photodetectors based on the PtTe 2 /graphene heterostructure are self-driven with a broadband photodetection from 405 to 1850 nm. In particular, the photodetectors have a high responsivity of up to ∼0.52 AW -1 (without bias) and a fast response time of ∼8.4 μs. Our work demonstrated an approach to synthesizing hybrid 2D Dirac heterostructures, which can be applied in the integration of on-chip, CMOS-compatible photodetectors with near-infrared detection, high sensitivity, and low energy consumption. |
