Valley Splitting in Silicon from the Interference Pattern of Quantum Oscillations.
| Autor: | Lodari M; QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Post Office Box 5046, 2600 GA Delft, Netherlands., Lampert L; Intel Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, Oregon 97124, USA., Zietz O; Intel Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, Oregon 97124, USA., Pillarisetty R; Intel Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, Oregon 97124, USA., Clarke JS; Intel Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, Oregon 97124, USA., Scappucci G; QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Post Office Box 5046, 2600 GA Delft, Netherlands. |
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| Jazyk: | angličtina |
| Zdroj: | Physical review letters [Phys Rev Lett] 2022 Apr 29; Vol. 128 (17), pp. 176603. |
| DOI: | 10.1103/PhysRevLett.128.176603 |
| Abstrakt: | We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined in silicon metal oxide semiconductor Hall-bar transistors. These silicon metal oxide semiconductor Hall bars are made by advanced semiconductor manufacturing on 300 mm silicon wafers and support a two-dimensional electron gas of high quality with a maximum mobility of 17.6×10^{3} cm^{2}/Vs and minimum percolation density of 3.45×10^{10} cm^{-2}. Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy splitting of the two low-lying conduction band valleys. From the analysis of the oscillations beating patterns up to T=1.7 K, we estimate a maximum valley splitting of ΔE_{VS}=8.2 meV at a density of 6.8×10^{12} cm^{-2}. Furthermore, the valley splitting increases with density at a rate consistent with theoretical predictions for a near-ideal semiconductor-oxide interface. |
| Databáze: | MEDLINE |
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