Colloidal III-V Quantum Dot Photodiodes for Short-Wave Infrared Photodetection.

Autor: Leemans J; Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, Gent, 9000, Belgium., Pejović V; Imec vzw, Kapeldreef 75, Leuven, 3001, Belgium., Georgitzikis E; Imec vzw, Kapeldreef 75, Leuven, 3001, Belgium., Minjauw M; Department of Solid State Science, Ghent University, Krijgslaan 281-S1, Gent, 9000, Belgium., Siddik AB; Imec vzw, Kapeldreef 75, Leuven, 3001, Belgium., Deng YH; Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, Gent, 9000, Belgium., Kuang Y; Imec vzw, Kapeldreef 75, Leuven, 3001, Belgium., Roelkens G; Photonics Research Group, Ghent University, Technologiepark-Zwijnaarde 126, Gent, 9052, Belgium., Detavernier C; Department of Solid State Science, Ghent University, Krijgslaan 281-S1, Gent, 9000, Belgium., Lieberman I; Imec vzw, Kapeldreef 75, Leuven, 3001, Belgium., Malinowski PE; Imec vzw, Kapeldreef 75, Leuven, 3001, Belgium., Cheyns D; Imec vzw, Kapeldreef 75, Leuven, 3001, Belgium., Hens Z; Physics and Chemistry of Nanostructures, Ghent University, Krijgslaan 281-S3, Gent, 9000, Belgium.
Jazyk: angličtina
Zdroj: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2022 Jun; Vol. 9 (17), pp. e2200844. Date of Electronic Publication: 2022 Apr 10.
DOI: 10.1002/advs.202200844
Abstrakt: Short-wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD-SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non-restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one-size-one-batch reaction and feature a band-edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post-processed to obtain In(As,P) nanocolloids stabilized by short-chain ligands, from which semiconducting films of n-In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p-NiO as the hole transport layer and Nb:TiO 2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.
(© 2022 The Authors. Advanced Science published by Wiley-VCH GmbH.)
Databáze: MEDLINE
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