Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films.
Autor: | Grigoriev FV; Research Computing Center, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, Russia.; Moscow Center for Fundamental and Applied Mathematics, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, Russia., Sulimov VB; Research Computing Center, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, Russia.; Moscow Center for Fundamental and Applied Mathematics, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, Russia., Tikhonravov AV; Research Computing Center, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, Russia.; Moscow Center for Fundamental and Applied Mathematics, M.V. Lomonosov Moscow State University, Leninskie Gory, 119234 Moscow, Russia. |
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Jazyk: | angličtina |
Zdroj: | Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2021 Nov 06; Vol. 11 (11). Date of Electronic Publication: 2021 Nov 06. |
DOI: | 10.3390/nano11112986 |
Abstrakt: | The full-atomistic classical molecular dynamics simulation of the laser heating of silicon dioxide thin films is performed. Both dense isotropic films and porous anisotropic films are investigated. It is assumed that heating occurs due to nodal structural defects, which are currently considered one of the possible causes of laser induced damage. It is revealed that heating to a temperature of 1000 K insignificantly affects the structure of the films and the concentration of point defects responsible for the radiation absorption. An increase in the heating temperature to 2000 K leads to the growth of the concentration of these defects. For "as deposited" films, this growth is greater in the case of a porous film deposited at a high deposition angle. Annealing of film reduces the difference in the concentration of laser induced defects in dense and porous films. The possible influence of optical active defects arising due to heating on the laser induced damage threshold is discussed. |
Databáze: | MEDLINE |
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