Autor: |
Clark CR; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Tinkey HN; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Sawyer BC; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Meier AM; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Burkhardt KA; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Seck CM; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Shappert CM; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Guise ND; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Volin CE; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Fallek SD; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Hayden HT; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Rellergert WG; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA., Brown KR; Georgia Tech Research Institute, Atlanta, Georgia 30332, USA. |
Abstrakt: |
Entanglement generation in trapped-ion systems has relied thus far on two distinct but related geometric phase gate techniques: Mølmer-Sørensen and light-shift gates. We recently proposed a variant of the light-shift scheme where the qubit levels are separated by an optical frequency [B. C. Sawyer and K. R. Brown, Phys. Rev. A 103, 022427 (2021)PLRAAN2469-992610.1103/PhysRevA.103.022427]. Here we report an experimental demonstration of this entangling gate using a pair of ^{40}Ca^{+} ions in a cryogenic surface-electrode ion trap and a commercial, high-power, 532 nm Nd:YAG laser. Generating a Bell state in 35 μs, we directly measure an infidelity of 6(3)×10^{-4} without subtraction of experimental errors. The 532 nm gate laser wavelength suppresses intrinsic photon scattering error to ∼1×10^{-5}. |