Poly(styrene)- block -Maltoheptaose Films for Sub-10 nm Pattern Transfer: Implications for Transistor Fabrication.

Autor: Löfstrand A; NanoLund and Solid State Physics, Lund University, SE-221 00 Lund, Sweden., Jafari Jam R; NanoLund and Solid State Physics, Lund University, SE-221 00 Lund, Sweden., Mothander K; NanoLund and Physical Chemistry, Lund University, P.O. Box 124, SE-221 00 Lund, Sweden., Nylander T; NanoLund and Physical Chemistry, Lund University, P.O. Box 124, SE-221 00 Lund, Sweden., Mumtaz M; Univ. Grenoble Alpes, CNRS, CERMAV, 38000 Grenoble, France., Vorobiev A; Division for Materials Physics, Department of Physics and Astronomy, Uppsala University, P.O. Box 516, SE-751 20 Uppsala, Sweden., Chen WC; Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan., Borsali R; Univ. Grenoble Alpes, CNRS, CERMAV, 38000 Grenoble, France., Maximov I; NanoLund and Solid State Physics, Lund University, SE-221 00 Lund, Sweden.
Jazyk: angličtina
Zdroj: ACS applied nano materials [ACS Appl Nano Mater] 2021 May 28; Vol. 4 (5), pp. 5141-5151. Date of Electronic Publication: 2021 May 13.
DOI: 10.1021/acsanm.1c00582
Abstrakt: Sequential infiltration synthesis (SIS) into poly(styrene)- block -maltoheptaose (PS- b -MH) block copolymer using vapors of trimethyl aluminum and water was used to prepare nanostructured surface layers. Prior to the infiltration, the PS- b -MH had been self-assembled into 12 nm pattern periodicity. Scanning electron microscopy indicated that horizontal alumina-like cylinders of 4.9 nm diameter were formed after eight infiltration cycles, while vertical cylinders were 1.3 nm larger. Using homopolymer hydroxyl-terminated poly(styrene) (PS-OH) and MH films, specular neutron reflectometry revealed a preferential reaction of precursors in the MH compared to PS-OH. The infiltration depth into the maltoheptaose homopolymer film was found to be 2.0 nm after the first couple of cycles. It reached 2.5 nm after eight infiltration cycles, and the alumina incorporation within this infiltrated layer corresponded to 23 vol % Al 2 O 3 . The alumina-like material, resulting from PS- b -MH infiltration, was used as an etch mask to transfer the sub-10 nm pattern into the underlying silicon substrate, to an aspect ratio of approximately 2:1. These results demonstrate the potential of exploiting SIS into carbohydrate-based polymers for nanofabrication and high pattern density applications, such as transistor devices.
Competing Interests: The authors declare no competing financial interest.
(© 2021 The Authors. Published by American Chemical Society.)
Databáze: MEDLINE
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