Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM.

Autor:	Quirion D; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain., Manna M; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain., Hidalgo S; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain., Pellegrini G; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain.
Jazyk:	angličtina
Zdroj:	Micromachines [Micromachines (Basel)] 2020 Dec 18; Vol. 11 (12). Date of Electronic Publication: 2020 Dec 18.
DOI:	10.3390/mi11121126
Abstrakt:	This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.
Databáze:	MEDLINE
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