Manufacturability and Stress Issues in 3D Silicon Detector Technology at IMB-CNM.
Autor: | Quirion D; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain., Manna M; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain., Hidalgo S; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain., Pellegrini G; Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus UAB, 08193 Barcelona, Spain. |
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Jazyk: | angličtina |
Zdroj: | Micromachines [Micromachines (Basel)] 2020 Dec 18; Vol. 11 (12). Date of Electronic Publication: 2020 Dec 18. |
DOI: | 10.3390/mi11121126 |
Abstrakt: | This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology. |
Databáze: | MEDLINE |
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