Electric-field control of spin dynamics during magnetic phase transitions.

Autor:	Nan T; Institute of Microelectronics, Tsinghua University, Beijing 100084, China. nantianxiang@mail.tsinghua.edu.cn rramesh@berkeley.edu n.sun@northeastern.edu.; Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA., Lee Y; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA., Zhuang S; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA., Hu Z; Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA., Clarkson JD; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA., Wang X; Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA., Ko C; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA., Choe H; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA., Chen Z; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA., Budil D; Department of Chemistry, Northeastern University, Boston, MA 02115, USA., Wu J; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA., Salahuddin S; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA., Hu J; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA., Ramesh R; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA. nantianxiang@mail.tsinghua.edu.cn rramesh@berkeley.edu n.sun@northeastern.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.; Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA., Sun N; Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA. nantianxiang@mail.tsinghua.edu.cn rramesh@berkeley.edu n.sun@northeastern.edu.
Jazyk:	angličtina
Zdroj:	Science advances [Sci Adv] 2020 Oct 02; Vol. 6 (40). Date of Electronic Publication: 2020 Oct 02 (Print Publication: 2020).
DOI:	10.1126/sciadv.abd2613
Abstrakt:	Controlling magnetization dynamics is imperative for developing ultrafast spintronics and tunable microwave devices. However, the previous research has demonstrated limited electric-field modulation of the effective magnetic damping, a parameter that governs the magnetization dynamics. Here, we propose an approach to manipulate the damping by using the large damping enhancement induced by the two-magnon scattering and a nonlocal spin relaxation process in which spin currents are resonantly transported from antiferromagnetic domains to ferromagnetic matrix in a mixed-phased metallic alloy FeRh. This damping enhancement in FeRh is sensitive to its fraction of antiferromagnetic and ferromagnetic phases, which can be dynamically tuned by electric fields through a strain-mediated magnetoelectric coupling. In a heterostructure of FeRh and piezoelectric PMN-PT, we demonstrated a more than 120% modulation of the effective damping by electric fields during the antiferromagnetic-to-ferromagnetic phase transition. Our results demonstrate an efficient approach to controlling the magnetization dynamics, thus enabling low-power tunable electronics. (Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).)
Databáze:	MEDLINE
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