Stimulated Raman Scattering in Ge Nanowires.

Autor:	Sistani M; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria., Bartmann MG; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria., Güsken NA; The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K., Oulton RF; The Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K., Keshmiri H; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria., Luong MA; Université Grenoble Alpes, CEA, IRIG-DEPHY, Grenoble 38054, France., Robin E; Université Grenoble Alpes, CEA, IRIG-DEPHY, Grenoble 38054, France., den Hertog MI; Université Grenoble Alpes, CNRS, Institut NEEL UPR2940, Grenoble 38042, France., Lugstein A; Technische Universität Wien, Institute of Solid State Electronics, Vienna 1040, Austria.
Jazyk:	angličtina
Zdroj:	The journal of physical chemistry. C, Nanomaterials and interfaces [J Phys Chem C Nanomater Interfaces] 2020 Jun 25; Vol. 124 (25), pp. 13872-13877. Date of Electronic Publication: 2020 May 28.
DOI:	10.1021/acs.jpcc.0c02602
Abstrakt:	Investigating group-IV-based photonic components is a very active area of research with extensive interest in developing complementary metal-oxide-semiconductor (CMOS) compatible light sources. However, due to the indirect band gap of these materials, effective light-emitting diodes and lasers based on pure Ge or Si cannot be realized. In this context, there is considerable interest in developing group-IV based Raman lasers. Nevertheless, the low quantum yield of stimulated Raman scattering in Si and Ge requires large device footprints and high lasing thresholds. Consequently, the fabrication of integrated, energy-efficient Raman lasers is challenging. Here, we report the systematic investigation of stimulated Raman scattering (SRS) in Ge nanowires (NWs) and axial Al-Ge-Al NW heterostructures with Ge segments that come into contact with self-aligned Al leads with abrupt metal-semiconductor interfaces. Depending on their geometry, these quasi-one-dimensional (1D) heterostructures can reassemble into Ge nanowires, Ge nanodots, or Ge nanodiscs, which are monolithically integrated within monocrystalline Al (c-Al) mirrors that promote both optical confinement and effective heat dissipation. Optical mode resonances in these nanocavities support in SRS thresholds as low as 60 kW/cm 2 . Most notably, our findings provide a platform for elucidating the high potential of future monolithically integrated, nanoscale low-power group-IV-based Raman lasers. Competing Interests: The authors declare no competing financial interest. (Copyright © 2020 American Chemical Society.)
Databáze:	MEDLINE
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