Ultrafast photoinduced anisotropy in GeSe 2 thin film.

Autor: Barik AR, Adarsh KV
Jazyk: angličtina
Zdroj: Optics letters [Opt Lett] 2017 Sep 01; Vol. 42 (17), pp. 3291-3294.
DOI: 10.1364/OL.42.003291
Abstrakt: In this Letter, we demonstrate for the first time that anisotropy can be induced at ultrafast time scales in an otherwise isotropic a-GeSe 2 thin film using polarized femtosecond light. This photoinduced anisotropy (PA) spans the bandgap to the sub-bandgap region and self-annihilates over picosecond time scales. The ultrafast decay rate of PA is a clear indication that the observed effect is due to photoinduced transient defects in the sub-bandgap region and associated structural rearrangement in the near-bandgap region.
Databáze: MEDLINE