Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.
| Autor: | Alyabyeva LN; Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, 141700, Russia. aliabeva.ln@mipt.ru., Zhukova ES; Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, 141700, Russia.; A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia., Belkin MA; Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, United States of America. mbelkin@ece.utexas.edu., Gorshunov BP; Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, 141700, Russia.; A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia. |
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| Jazyk: | angličtina |
| Zdroj: | Scientific reports [Sci Rep] 2017 Aug 04; Vol. 7 (1), pp. 7360. Date of Electronic Publication: 2017 Aug 04. |
| DOI: | 10.1038/s41598-017-07164-1 |
| Abstrakt: | We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range. |
| Databáze: | MEDLINE |
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