Optical and Electrical Characteristics of Silicon Nanowires Prepared by Electroless Etching.

Autor: Hutagalung SD; Physics Department, Faculty of Science, Jazan University, Jazan, Saudi Arabia. shutagalung@jazanu.edu.sa., Fadhali MM; Physics Department, Faculty of Science, Jazan University, Jazan, Saudi Arabia.; Physics Department, Faculty of Science, Ibb University, Ibb, Yemen., Areshi RA; Physics Department, Faculty of Science, Jazan University, Jazan, Saudi Arabia., Tan FD; School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Penang, Malaysia.
Jazyk: angličtina
Zdroj: Nanoscale research letters [Nanoscale Res Lett] 2017 Dec; Vol. 12 (1), pp. 425. Date of Electronic Publication: 2017 Jun 24.
DOI: 10.1186/s11671-017-2197-3
Abstrakt: Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO 3 . Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I-V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
Databáze: MEDLINE
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