| Autor: |
Milekhin AG; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Cherkasova O; Novosibirsk State University, Novosibirsk, 630090, Russia.; Institute of Laser Physics of SB RAS, Novosibirsk, 630090, Russia., Kuznetsov SA; Novosibirsk State University, Novosibirsk, 630090, Russia.; A.V. Rzhanov Institute of Semiconductor Physics RAS, Novosibirsk Branch 'TDIAM', Lavrentiev Ave. 2/1, Novosibirsk, 630090, Russia., Milekhin IA; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Rodyakina EE; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Latyshev AV; A.V. Rzhanov Institute of Semiconductor Physics, Novosibirsk, 630090, Russia.; Novosibirsk State University, Novosibirsk, 630090, Russia., Banerjee S; Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany., Salvan G; Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany., Zahn DRT; Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany. |
