Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors.

Autor: Yakimov A; Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk, Russia ; Tomsk State University, 634050 Tomsk, Russia., Kirienko V; Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk, Russia., Timofeev V; Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk, Russia., Bloshkin A; Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk, Russia., Dvurechenskii A; Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, 630090 Novosibirsk, Russia.
Jazyk: angličtina
Zdroj: Nanoscale research letters [Nanoscale Res Lett] 2014 Sep 16; Vol. 9 (1), pp. 504. Date of Electronic Publication: 2014 Sep 16 (Print Publication: 2014).
DOI: 10.1186/1556-276X-9-504
Abstrakt: We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devices with a lower doping density is found to exhibit a lower capture probability and a higher photoconductive gain. The most pronounced change in the trapping characteristics upon doping is observed at a negative bias polarity when the photoexcited holes move toward the δ-doping plane. The latter result implies that the δ-doping layers are directly involved in the processes of hole capture by the quantum dots.
Databáze: MEDLINE
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