| Autor: |
Linhart WM; Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom., Chai J, Morris RJ, Dowsett MG, McConville CF, Durbin SM, Veal TD |
| Jazyk: |
angličtina |
| Zdroj: |
Physical review letters [Phys Rev Lett] 2012 Dec 14; Vol. 109 (24), pp. 247605. Date of Electronic Publication: 2012 Dec 10. |
| DOI: |
10.1103/PhysRevLett.109.247605 |
| Abstrakt: |
Extreme electron accumulation with sheet density greater than 10(13) cm(-2) is almost universally present at the surface of indium nitride (InN). Here, x-ray photoemission spectroscopy and secondary ion mass spectrometry are used to show that the surface Fermi level decreases as the Mg concentration increases, with the sheet electron density falling to below 10(8) cm(-2). Surface space-charge calculations indicate that the lowering of the surface Fermi level increases the density of unoccupied donor-type surface states and that these are largely compensated by Mg acceptors in the near-surface hole depletion region rather than by accumulated electrons. This is a significant step towards the realization of InN-based optoelectronic devices. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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