| Autor: |
Do EC; Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea., Shin YH, Lee BJ |
| Jazyk: |
angličtina |
| Zdroj: |
Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2009 Aug 12; Vol. 21 (32), pp. 325801. Date of Electronic Publication: 2009 Jul 13. |
| DOI: |
10.1088/0953-8984/21/32/325801 |
| Abstrakt: |
Modified embedded-atom method (MEAM) interatomic potentials for the Ga-N and In-N binary and Ga-In-N ternary systems have been developed based on the previously developed potentials for Ga, In and N. The potentials can describe various physical properties (structural, elastic and defect properties) of both zinc-blende and wurtzite-type GaN and InN as well as those of constituent elements, in good agreement with experimental data or high-level calculations. The potential can also describe the structural behavior of Ga(1-x)In(x)N ternary nitrides reasonably well. The applicability of the potentials to atomistic investigations of atomic/nanoscale structural evolution in Ga(1-x)In(x)N multi-component nitrides during the deposition of constituent element atoms is discussed. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
|
