Dimensional crossover and weak localization in a 90 nm n-GaAs thin film.

Autor: Gilbertson AM, Newaz AK, Chang WJ, Bashir R, Solin SA, Cohen LF
Jazyk: angličtina
Zdroj: Applied physics letters [Appl Phys Lett] 2009 Jul 06; Vol. 95 (1), pp. 12113. Date of Electronic Publication: 2009 Jul 10.
DOI: 10.1063/1.3176968
Abstrakt: We report on the magnetotransport in a 90 nm thick n-type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T
Databáze: MEDLINE