Autor: |
Gilbertson AM, Newaz AK, Chang WJ, Bashir R, Solin SA, Cohen LF |
Jazyk: |
angličtina |
Zdroj: |
Applied physics letters [Appl Phys Lett] 2009 Jul 06; Vol. 95 (1), pp. 12113. Date of Electronic Publication: 2009 Jul 10. |
DOI: |
10.1063/1.3176968 |
Abstrakt: |
We report on the magnetotransport in a 90 nm thick n-type GaAs epitaxial thin film in the weak localization (WL) regime. Low temperature (T=50 K) magnetotransport data are fit with WL theory, from which the phase coherence time, tau(varphi) proportional, variantT(-p) (p=1.22+/-0.01), are extracted. We conclude that the dominant dephasing mechanism at these temperatures is electron-electron (e-e) scattering in the Nyquist limit. Evidence of a crossover from two-dimensional to three-dimensional behavior with respect to both coherent transport (WL) and e-e interactions is observed in the temperature dependence of the zero-field conductivity and tau(varphi), respectively. |
Databáze: |
MEDLINE |
Externí odkaz: |
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