| Autor: |
Fossum, Jerry G., 1943-, author |
| Jazyk: |
angličtina |
| Informace o vydání: |
Cambridge : Cambridge University Press, 2013. |
| Předmět: |
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| Druh dokumentu: |
Online; Non-fiction; Electronic document |
| Abstrakt: |
Summary: Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource. |
| Databáze: |
Vybrané kolekce e-knih |
| Externí odkaz: |
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