Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures.
| Autor: | Young, D. K.1, Reynolds, Jr., C. L.2 lew_reynolds@ncsu.edu, Swaminathan, V.3, Walters, F. S.4 |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology). 9/1/2005, Vol. 41 Issue 18, p1008-1010. 3p. |
| Databáze: | Business Source Ultimate |
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