Temperature-Dependent DC and Small-Signal Analysis of AlGaAs/InGaAs pHEMT for High-Frequency Applications.

Autor: Abdul Alim, Mohammad1, Rezazadeh, Ali A.1
Zdroj: IEEE Transactions on Electron Devices. Mar2016, Vol. 63 Issue 3, p1005-1012. 8p.
Databáze: Business Source Ultimate