Improved performance of lateral GaN-based light emitting diodes with novel buried CBL structure in ITO film and reflective electrodes.
| Autor: | Cheng, Yan1 chengyan@semi.ac.cn, Zhan, Teng1 zhanteng10@semi.ac.cn, Ma, Jun1 majun@semi.ac.cn, Zhang, Lian1 zhanglian07@semi.ac.cn, Si, Zhao1 sizhao@semi.ac.cn, Yi, Xiaoyan1 spring@semi.ac.cn, Wang, Guohong1, Li, Jinmin1 |
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| Zdroj: | Materials Science in Semiconductor Processing. Jan2014, Vol. 17, p100-103. 4p. |
| Databáze: | Academic Search Ultimate |
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