Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation.
| Autor: | Perevoshchikov, V. A., Skupov, V. D. |
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| Zdroj: | Technical Physics Letters. Apr99, Vol. 25 Issue 4, p315. 2p. |
| Databáze: | Academic Search Ultimate |
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