Effect of band-gap narrowing on the diffusion of charged impurities in semiconductors.

Autor:	Sokolovskiı, B. S., Monastyrskiı, L. S.
Zdroj:	Semiconductors. Nov97, Vol. 31 Issue 11, p1148. 3p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu