Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers.
| Autor: | Adamowicz, Bogusława1 Boguslawa.Adamowicz@polsl.pl, Miczek, Marcin1,2, Hashizume, Tamotsu2, Klimasek, Andrzej1, Bobek, Piotr1, Żywicki, Janusz3 |
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| Zdroj: | Optica Applicata. 2007, Vol. 37 Issue 4, p327-334. 8p. 1 Diagram, 4 Graphs. |
| Databáze: | Academic Search Ultimate |
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