Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire.
| Autor: | Klad'ko, V. P.1, Chornen’kii, S. V.1, Naumov, A. V.1 naumov@ifpht.kiev.ua, Komarov, A. V.2, Tacano, M.3, Sveshnikov, Yu. N.4, Vitusevich, S. A.1, Belyaev, A. E.1 |
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| Zdroj: | Semiconductors. Sep2006, Vol. 40 Issue 9, p1060-1065. 6p. 2 Graphs. |
| Databáze: | Academic Search Ultimate |
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