Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy.

Autor: Naito, Aiko1 (AUTHOR), Ueno, Kohei1 (AUTHOR), Fujioka, Hiroshi1 (AUTHOR) hfujioka@iis.u-tokyo.ac.jp
Zdroj: Physica Status Solidi. A: Applications & Materials Science. Nov2024, Vol. 221 Issue 21, p1-5. 5p.
Databáze: Academic Search Ultimate
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