Interstitial Defect Modulation Promotes Thermoelectric Properties of p‐Type HfNiSn.

Autor: Ai, Xin1,2 (AUTHOR), Xue, Wenhua3 (AUTHOR), Giebeler, Lars1 (AUTHOR), Pérez, Nicolás1 (AUTHOR), Lei, Binghua4 (AUTHOR), Zhang, Yue3 (AUTHOR), Zhang, Qihao5 (AUTHOR), Nielsch, Kornelius1,2,6 (AUTHOR), Wang, Yumei3,7 (AUTHOR) wangym@iphy.ac.cn, He, Ran1 (AUTHOR) r.he@ifw-dresden.de
Zdroj: Advanced Energy Materials. 10/11/2024, Vol. 14 Issue 38, p1-10. 10p.
Databáze: Academic Search Ultimate
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