Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology.

Autor: Iype, Preethi Elizabeth1 (AUTHOR) preethi.ec@stisttvm.edu.in, Babu, V Suresh2 (AUTHOR), Paul, Geenu1 (AUTHOR)
Zdroj: Heat Transfer. Nov2024, Vol. 53 Issue 7, p3487-3507. 21p.
Databáze: Academic Search Ultimate
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