Trap states and carrier diffusion lengths in NiO/β-Ga2O3 heterojunctions.

Autor:	Polyakov, A. Y.1 (AUTHOR), Yakimov, E. B.1,2 (AUTHOR), Saranin, D. S.1 (AUTHOR), Chernykh, A. V.1 (AUTHOR), Vasilev, A. A.1 (AUTHOR), Gostishchev, P.1 (AUTHOR), Kochkova, A. I.1 (AUTHOR), Alexanyan, L. A.1 (AUTHOR), Matros, N. R.1 (AUTHOR), Shchemerov, I. V.1 (AUTHOR), Pearton, S. J.3 (AUTHOR) spear@mse.ufl.edu
Zdroj:	Journal of Applied Physics. 4/28/2024, Vol. 135 Issue 16, p1-12. 12p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu