The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations.
| Autor: | Yang, Zeng-hui1,2 (AUTHOR) yangzenghui_mtrc@caep.cn, Liu, Yang1,2 (AUTHOR), An, Ning1,2 (AUTHOR), Chen, Xingyu1,2 (AUTHOR) |
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| Zdroj: | Journal of Chemical Physics. 7/21/2023, Vol. 159 Issue 3, p1-11. 11p. |
| Databáze: | Academic Search Ultimate |
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