First-Principles Study on the Effect of In Atom Substitution Position on the Novel Orthorhombic GaN.
| Autor: | SHAN Hengsheng1,2 hsshan@sust.edu.cn, LIU Shengwei1, LI Xiaoya3, MEI Yunjian1, XU Chaoming1, MA Shufang1, XU Bingshe1,4 xubingshe@sust.edu.cn |
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| Zdroj: | Journal of Synthetic Crystals. Jan2023, Vol. 52 Issue 1, p89-97. 9p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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