Electron irradiation effects on InP-based HEMTs with different gate widths.

Autor:	Sun, S. X.1,2 zhongyinghui@zzu.edu.cn, Fu, X. L.1, Wang, L.1, M. E.1, Yi, J. J.1, Yao, R. X.1, Zheng, X. Y.1, Wu, H. T.1, Liu, F.1,2, Zhong, Y. H.3, Li, Y. X.3, Ding, P.4, Jin, Z.4
Zdroj:	Journal of Ovonic Research. Sep/Oct2021, Vol. 17 Issue 5, p411-420. 10p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu