Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching.
| Autor: | Gao, Y.1 yangao@engineering.ucsb.edu, Ben-Yaacov, I.1, Mishra, U.K.1, Hu, E.L.1 |
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| Zdroj: | Journal of Applied Physics. 12/1/2004, Vol. 96 Issue 11, p6925-6927. 3p. 1 Diagram, 5 Graphs. |
| Databáze: | Academic Search Ultimate |
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