The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE.

Autor: Sakharov, A. V.1 (AUTHOR) val.beam@mail.ioffe.ru, Lundin, W. V.1 (AUTHOR), Zavarin, E. E.1 (AUTHOR), Usov, S. O.2 (AUTHOR), Brunkov, P. N.1 (AUTHOR), Tsatsulnikov, A. F.2 (AUTHOR)
Zdroj: Technical Physics Letters. Dec2020, Vol. 46 Issue 12, p1211-1214. 4p.
Databáze: Academic Search Ultimate