A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors.

Autor: García-Loureiro, Antonio J.1 antonio@dec.usc.es, López-González, J. M.2 jmlopezg@eel.upc.es, Pena, Tomás F.1 tomas@dec.usc.es
Zdroj: International Journal of Numerical Modelling. Jan/Feb2003, Vol. 16 Issue 1, p53-66. 14p. 3 Diagrams, 6 Charts, 7 Graphs.
Databáze: Academic Search Ultimate