Analysis of high-k HfO2 and HfSiO4 dielectric films

Autor: Nieveen, W.1, Schueler, B.W.2 bschueler@revera.com, Goodman, G.1, Schnabel, P.1, Moskito, J.1, Mowat, I.1, Chao, G.1
Zdroj: Applied Surface Science. Jun2004, Vol. 231-232, p556-560. 5p.
Databáze: Academic Search Ultimate