Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K.

Autor: Mynbaev, K. mynkad@mail.ioffe.ru, Bazhenov, N.1, Semakova, A., Mikhailova, M.1, Stoyanov, N.2, Kizhaev, S.2, Molchanov, S.2, Astakhova, A.2, Chernyaev, A., Lipsanen, H., Bougrov, V.3
Zdroj: Semiconductors. Feb2017, Vol. 51 Issue 2, p239-244. 6p.
Databáze: Academic Search Ultimate