Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2-300 K.
Autor: | Mynbaev, K. mynkad@mail.ioffe.ru, Bazhenov, N.1, Semakova, A., Mikhailova, M.1, Stoyanov, N.2, Kizhaev, S.2, Molchanov, S.2, Astakhova, A.2, Chernyaev, A., Lipsanen, H., Bougrov, V.3 |
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Zdroj: | Semiconductors. Feb2017, Vol. 51 Issue 2, p239-244. 6p. |
Databáze: | Academic Search Ultimate |
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