On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n-GaN substrates.
| Autor: | Virko, M.1, Kogotkov, V.1, Leonidov, A.1, Voronenkov, V.2, Rebane, Yu.2, Zubrilov, A.2, Gorbunov, R.2, Latyshev, P.2, Bochkareva, N.2, Lelikov, Yu.2, Tarhin, D.2, Smirnov, A.2, Davydov, V.2, Shreter, Yu.2 y.shreter@mail.ioffe.ru |
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| Zdroj: | Semiconductors. May2016, Vol. 50 Issue 5, p699-704. 6p. |
| Databáze: | Academic Search Ultimate |
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