Zobrazeno 1 - 5
of 5
pro vyhledávání: '"yasushi ebizuka"'
Autor:
Gian Francesco Lorusso, Dieter Van Den Heuvel, Mohamed Zidan, Alain Moussa, Christophe Beral, Anne-Laure Charley, Danilo De Simone, Anuja De Silva, Elisseos Verveniotis, Ali Haider, Tsuyoshi Kondo, hiroyuki shindo, yasushi ebizuka, miki isawa
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::213d302b05d4ba0f89b45b5dc70ef7f0
https://doi.org/10.1117/12.2658280
https://doi.org/10.1117/12.2658280
Autor:
Gian Lorusso, Danilo De Simone, Hiroyuki Shindo, Tsuyoshi Kondo, Hirohito Koike, Frieda Van Roey, Peter De Bisschop, Yasutaka Toyoda, Christophe Beral, Taeko Kashiwa, Anne-Laure Charley, Yasushi Ebizuka, Yukari Yamada, Naoma Ban, Mohamed Saib
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20cd4c506ce2b869531616eff42e9209
https://doi.org/10.1117/12.2583691
https://doi.org/10.1117/12.2583691
Autor:
Yasushi Ebizuka, Gian Lorusso, Naoma Ban, Mohamed Saib, Anne-Laure Charley, Tsuyoshi Kondo, Kawamoto Yuta, Philippe Leray
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Over the years, the reduction in the size of semiconductor devices has made their performances extremely sensitive to small differences between printed structures and intended design. As a consequence, metrology equipment manufacturers are nowadays p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3de06859dca160ea32eacd711cab668
https://doi.org/10.1117/12.2583696
https://doi.org/10.1117/12.2583696
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
As a follow-up to last year’s “What is prevalent CD-SEM's role in EUV era?” [1], here we report our ongoing progress on total metrology solutions for the sub-10-nm extreme ultraviolet (EUV) lithography process. We discuss two technical approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc0316ec7471bd5c040fa79db4ac06b4
https://doi.org/10.1117/12.2551868
https://doi.org/10.1117/12.2551868
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
We have previously demonstrated our method to obtain unbias dense line’s LER (Line Edge Roughness) processed by EUV (Extreme Ultra-Violet) lithography. No special edge-detection, simulation modeling, beam-scan, nor image processing is required, exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f4af36f1c09bee56fd7fd6a6246e8a
https://doi.org/10.1117/12.2515803
https://doi.org/10.1117/12.2515803