Zobrazeno 1 - 10
of 21
pro vyhledávání: '"xuexin lan"'
Publikováno v:
AIP Advances, Vol 4, Iss 5, Pp 057106-057106-6 (2014)
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO3 substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust a
Externí odkaz:
https://doaj.org/article/b3a370bd310745c98cc2d698fceeb84b
Autor:
Dandan Yan, Xuexin Lan, Bingping Liu, Yanshan Huang, Xiaoxiao Wu, Xiangkang Wei, Honghong Nie, Keshi Yang, Chao Deng, Guozhao Chen, Xianyan Yang
Publikováno v:
Proceedings of the International Display Workshops. :350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e3ea18dda72b1be48aeef82a95ec13
https://doi.org/10.36463/idw.2022.0350
https://doi.org/10.36463/idw.2022.0350
Autor:
YUAN YUAN ZHONG, XUEXIN LAN, CHUNRONG LIN, JIE LIN, SHANGFU CAI, YUTIAN LIU, BAILING TANG, WANYU SU, CHANGJUAN ZHANG, GUOZHAO CHEN, XIANYAN YANG
Publikováno v:
Proceedings of the International Display Workshops. :323
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7ac3f48c3ec5b971b5e708e2c4f14ed
https://doi.org/10.36463/idw.2022.0323
https://doi.org/10.36463/idw.2022.0323
Publikováno v:
Proceedings of the International Display Workshops. :284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c98aadea7c02db489483566f1965baca
https://doi.org/10.36463/idw.2021.0284
https://doi.org/10.36463/idw.2021.0284
Autor:
Qingwen Hu, Yuanyuan Zhong, Keshi Yang, Chao Deng, Xiai Xu, Zongzhui Liu, Jiamiao Kang, Xuexin Lan, Yanshan Huang, Guozhao Chen, Junyi Li
Publikováno v:
Proceedings of the International Display Workshops. :319
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17b4731f9eab5d7df978f40ac8b04c1d
https://doi.org/10.36463/idw.2020.0319
https://doi.org/10.36463/idw.2020.0319
Autor:
Xuexin Lan, Chong Sun, Zhiguo Liu, Yan Chen, Jiang Yin, Yidong Xia, Aidong Li, Yan-Qiang Cao, Changjie Gong, Bo Xu, Xin Ou
Publikováno v:
Microelectronic Engineering. 133:88-91
Graphical abstractDisplay Omitted Charge trapping memory devices based on HfAlO thin film were deposited.The memory devices based on HfAlO thin film had good charge trapping capability.Intensive mixing of two high-k materials can improve the charge t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30aa9ae86d0a470927b1f12e33131e47
https://doi.org/10.1016/j.mee.2014.12.001
https://doi.org/10.1016/j.mee.2014.12.001
Autor:
zuoyin li, xianfeng lin, zhenqing xie, chunrong lin, lihua zheng, fushan dai, dandan yan, xiaoyu wang, changjuan zhang, qingwen hu, xuexin lan, guozhao chen, junyi li, lei wang
Publikováno v:
Proceedings of the International Display Workshops. :638
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68de1053434433c8a96cc95b6190cc48
https://doi.org/10.36463/idw.2019.0638
https://doi.org/10.36463/idw.2019.0638
Publikováno v:
International Journal of Hydrogen Energy. 38:3987-3993
In virtue of the first-principle calculations, the hydrogen storage behavior in several metal decorated graphyne was investigated. It is found that the hydrogen storage capacity can be as large as 18.6, 10.5, 9.9 and 9.5 wt% with average adsorption e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d7660b0ef2008eb4427ea745bb2c2ad
https://doi.org/10.1016/j.ijhydene.2013.01.064
https://doi.org/10.1016/j.ijhydene.2013.01.064
Publikováno v:
Proceedings of SPIE; 9/28/2018, Vol. 10843, p1-7, 7p
Autor:
Bo Xu, Feng Yan, Xin Ou, Jiang Yin, Yidong Xia, Yan Lei, Aidong Li, Changjie Gong, Zhiguo Liu, Xuexin Lan, Yan Chen, Jianxin Lu
Publikováno v:
Japanese Journal of Applied Physics. 53:08NG02
The charge-trapping memory devices with the structures p-Si/Al2O3/AlTi4Ox/Al2O3/Pt were fabricated by using atomic layer deposition and RF magnetron sputtering techniques, and a memory window of 6.61 V and a high charge-trapping density of 1.29 × 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d4dbcc5e8fb41d4d62eef5c5f6dac9e
https://doi.org/10.7567/jjap.53.08ng02
https://doi.org/10.7567/jjap.53.08ng02