Exploiting Read/Write Asymmetry to Achieve Opportunistic SRAM Voltage Switching in Dual-Supply Near-Threshold Processors

Autor: Xuan Zhang, Yunfei Gu, Pai Wang, Vaibhav Verma, Mircea R. Stan, Dengxue Yan

Publikováno v: Journal of Low Power Electronics and Applications
Volume 8
Issue 3
Journal of Low Power Electronics and Applications, Vol 8, Iss 3, p 28 (2018)

Energy-efficient microprocessors are essential for a wide range of applications. While near-threshold computing is a promising technique to improve energy efficiency, optimal supply demands from logic core and on-chip memory are conflicting. In this

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