Zobrazeno 1 - 10
of 27 943
pro vyhledávání: '"wide-bandgap"'
Autor:
Renata Ratajczak, Mahwish Sarwar, Damian Kalita, Przemysław Jozwik, Cyprian Mieszczynski, Joanna Matulewicz, Magdalena Wilczopolska, Wojciech Wozniak, Ulrich Kentsch, René Heller, Elzbieta Guziewicz
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract RE-doped β-Ga2O3 seems attractive for future high-power LEDs operating in high irradiation environments. In this work, we pay special attention to the issue of radiation-induced defect anisotropy in β-Ga2O3, which is crucial for device man
Externí odkaz:
https://doaj.org/article/c607e02501be497692ff7112ac75c4f8
Autor:
M.F. Roslan, M.S. Reza, M.S. Rahman, M. Mansor, A.Z. Arsad, Ker Pin Jern, Vigna K. Ramachandaramurthy, M.A. Hannan
Publikováno v:
Alexandria Engineering Journal, Vol 104, Iss , Pp 636-664 (2024)
This paper provides a comprehensive bibliometricanalysis of solid-state circuit breakers, including technological developments and control methods in electric power distribution systems. By compiling and analyzing data from the Scopus database, the m
Externí odkaz:
https://doaj.org/article/4052e7fd208149cd8903bbc21bca21a6
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract We report the growth of bulk β-Ga2O3 crystals based on crystal pulling from a melt using a cold container without employing a precious-metal crucible. Our approach, named oxide crystal growth from cold crucible (OCCC), is a fusion between t
Externí odkaz:
https://doaj.org/article/a5dbc15683f545c4a19bc45558eb31d5
Autor:
Junjun Xue, Jiaming Tong, Zhujun Gao, Zhouyu Chen, Haoyu Fang, Saisai Wang, Ting Zhi, Jin Wang
Publikováno v:
Frontiers of Optoelectronics, Vol 17, Iss 1, Pp 1-8 (2024)
Abstract An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and s
Externí odkaz:
https://doaj.org/article/4edc942e41ab40ff8d3bc3c2b05bb04e
Autor:
Song, Qihao
Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN
Externí odkaz:
https://hdl.handle.net/10919/121146
Autor:
Shiqing Cheng
Publikováno v:
Heliyon, Vol 10, Iss 17, Pp e36965- (2024)
Wide-gap Cu(In,Ga)Se2 (CIGS) solar cells exhibit a superior match to the solar spectrum, resulting in a higher ideal efficiency (Eff). However, in reality, their device Eff is lower than that of narrow-gap CIGS solar cells. This study aims to identif
Externí odkaz:
https://doaj.org/article/0a0697988454417a9a9f451b783c76e3
Autor:
Francois P. Du Toit, Ivan W. Hofsajer
Publikováno v:
IEEE Access, Vol 12, Pp 38646-38663 (2024)
Recent advances in semiconductor technology have paved the way for ultra-fast switching capabilities. This increase in switching speed enhances efficiency, power density, and frequency but also increases overvoltage oscillations at the switching node
Externí odkaz:
https://doaj.org/article/c674441477ff4393a8394dd61ecd0af0
Publikováno v:
PhotoniX, Vol 5, Iss 1, Pp 1-13 (2024)
Abstract The vacuum-ultraviolet (VUV, 10–200 nm) imaging photodetector (PD) based on the wide bandgap semiconductor (WBGS) can realize a more detailed observation of solar storms than the silicon ones. Here, an 8 × 8 VUV PD array based on the semi
Externí odkaz:
https://doaj.org/article/18ca15d5f2214791a2313916d7481594
Visualizing the Structure‐Property Nexus of Wide‐Bandgap Perovskite Solar Cells under Thermal Stress
Autor:
Degong Ding, Yuxin Yao, Pengjie Hang, Chenxia Kan, Xiang Lv, Xiaoming Ma, Biao Li, Chuanhong Jin, Deren Yang, Xuegong Yu
Publikováno v:
Advanced Science, Vol 11, Iss 29, Pp n/a-n/a (2024)
Abstract Wide‐bandgap perovskite solar cells (PSCs) toward tandem photovoltaic applications are confronted with the challenge of device thermal stability, which motivates to figure out a thorough cognition of wide‐bandgap PSCs under thermal stres
Externí odkaz:
https://doaj.org/article/c3f87b47bb614a75a0f0c5d59d620f89
Autor:
Francois P. du Toit, Ivan W. Hofsajer
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1671-1683 (2024)
Wide Bandgap devices are becoming more popular because of their higher switching performance. However, this higher performance comes at the cost of increased susceptibility to parasitic effects and leads to problems such as voltage overshoot and ring
Externí odkaz:
https://doaj.org/article/d1a907b6ae59456683b803f362d35f8c