Zobrazeno 1 - 10
of 4 951
pro vyhledávání: '"wide band gap"'
Autor:
WANG Shuo, YAN Qun, YAN Hao, SUN Yongtao, WANG Anshuai, ZHANG Zhaozhan, DING Qian, WANG Liang
Publikováno v:
Hangkong gongcheng jinzhan, Vol 15, Iss 5, Pp 179-190 (2024)
The suppression of vibration and noise has always been an important issue in engineering，and metamaterials have shown significant application value in vibration and noise reduction. In this paper，a novel hollow starshaped chiral metamaterial is d
Externí odkaz:
https://doaj.org/article/5e80e02c30af4d34a3e510eb2dbdac2a
An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs
Publikováno v:
IET Power Electronics, Vol 17, Iss 12, Pp 1583-1593 (2024)
Abstract The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration. This paper presents a design approach for the RC snubber of cascode
Externí odkaz:
https://doaj.org/article/dbc93eee0c7645958d34147aca7d049a
Autor:
Lukas Bergmann, Mark‐M. Bakran
Publikováno v:
IET Power Electronics, Vol 17, Iss 7, Pp 789-801 (2024)
Abstract This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On
Externí odkaz:
https://doaj.org/article/2a9b6b5f889e44109c2c4353b62e6c05
Publikováno v:
IET Power Electronics, Vol 17, Iss 7, Pp 878-889 (2024)
Abstract Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on curre
Externí odkaz:
https://doaj.org/article/a053026151ac4f13a69146130df9c27f
Publikováno v:
Electronics Letters, Vol 60, Iss 17, Pp n/a-n/a (2024)
Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume roo
Externí odkaz:
https://doaj.org/article/b65dd832d6ba46d7aaf32d7f1d540b51
Publikováno v:
Frontiers in Chemistry, Vol 12 (2024)
High-performance wide-bandgap (WBG) perovskite solar cells are used as top cells in perovskite/silicon or perovskite/perovskite tandem solar cells, which possess the potential to overcome the Shockley-Queisser limitation of single-junction perovskite
Externí odkaz:
https://doaj.org/article/e35b2ec02ff74f2a81ab65c5caffb6c3
Publikováno v:
Heliyon, Vol 10, Iss 15, Pp e34880- (2024)
Zinc Cobaltite (ZCO) and Nickel Oxide (NiO) nanoparticles (NPs) were synthesized using a sol-gel technique, and their composites with different weight ratios were prepared using a straightforward sonication method. The NiO and ZCO NPs had small cryst
Externí odkaz:
https://doaj.org/article/b5072b9247e9402481ecf0c2754c402f
Autor:
Cao, Chanyin a, Ma, Xueqing a, Zheng, Xinming a, Ran, Guangliu c, Bian, Ziqing a, Liu, Yahui b, ⁎, Zhang, Wenkai c, Bo, Zhishan a, b, ⁎
Publikováno v:
In Chemical Engineering Journal 15 November 2024 500
Autor:
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectr
Externí odkaz:
https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56
Autor:
Jiawang Yong, Yiyao Dong, Yue Bao, Wanting Li, Sue Ren, Weiping Sun, Zhishuai Wan, Ming Liu, Daining Fang
Publikováno v:
Materials & Design, Vol 241, Iss , Pp 112945- (2024)
This study presents a novel star-shaped honeycomb meta-material (N-SSHM) that realizes improved static mechanical and vibration properties by introducing rings to the four sides of a traditional star-shaped honeycomb meta-material (T-SSHM). Optimizat
Externí odkaz:
https://doaj.org/article/18877ffdb9f2435bbe3bf79874437d08