Zobrazeno 1 - 10
of 97
pro vyhledávání: '"wafer bow"'
Publikováno v:
Reviews on Advanced Materials Science, Vol 61, Iss 1, Pp 829-837 (2022)
Sublimation growth of cubic silicon carbide (3C–SiC) with diameters of 50 and 100 mm was performed on freestanding homoepitaxial grown seeds. For both seeds and sublimation grown crystals, two different relaxation axes with varying curvature could
Externí odkaz:
https://doaj.org/article/f86b4e817e564ab3a97842abaa8f8939
Akademický článek
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Autor:
Yusuke Matsuda, Ian Manning, Tuerxun Ailihumaer, Edward Sanchez, Balaji Raghothamachar, Gilyong Chung, Michael Dudley
Publikováno v:
Materials Science Forum. 1004:37-43
The thermoelastic stress, mechanical properties and defect content of bulk 4H n-type SiC crystals were investigated following adjustments to the PVT growth cell configuration that led to a 40% increase in growth rate. The resulting 150 mm wafers were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a4cfc31ccc280e5f19296db53c230eb
https://doi.org/10.4028/www.scientific.net/msf.1004.37
https://doi.org/10.4028/www.scientific.net/msf.1004.37
Autor:
Dan Pearce, Wang Wang, Andrew Clark, Matthew Geen, Andrew Johnson, Andrew Joel, Sung Wook Lim, Rodney Pelzel
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXV.
Wafer bow/warp in high performance 940nm VCSEL epitaxial wafers has been eliminated through the use of 150 mm Ge substrates, replacing conventional GaAs substrates. Ge is a drop-in replacement for GaAs for this application and has additional benefits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b3be614a5e11c119e8d952f1578c121
https://doi.org/10.1117/12.2583207
https://doi.org/10.1117/12.2583207
Autor:
Ouloide Yannick Goue, Balaji Raghothamachar, Michael Dudley, Ian Manning, Jianqiu Guo, Yu Yang, Gil Yong Chung, Edward Sanchez
Publikováno v:
Materials Science Forum. 924:11-14
Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b51e2d31157abebf675c7d5d1d7e816
https://doi.org/10.4028/www.scientific.net/msf.924.11
https://doi.org/10.4028/www.scientific.net/msf.924.11
Autor:
Spearing, S. Mark, Turner, K.T.
Direct wafer bonding has been identified as an en-abling technology for microelectromechanical systems (MEMS). As the complexity of devices increase and the bonding of multiple patterned wafers is required, there is a need to understand the factors t
Externí odkaz:
http://hdl.handle.net/1721.1/3661
Akademický článek
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Publikováno v:
Journal of Crystal Growth. 464:148-152
For the purpose of controlling the wafer bow of GaN-on-Si structure, in situ curvature transient during the growth of a GaN layer on an AlN interlayer was investigated systematically by estimating the compressive strain applied to the GaN layer with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::972d5ab1ee8d025fd48a4b12ab40cecf
https://doi.org/10.1016/j.jcrysgro.2016.12.090
https://doi.org/10.1016/j.jcrysgro.2016.12.090
Publikováno v:
35th European Mask and Lithography Conference (EMLC 2019).
In this work we address the capability of an alternative overlay evaluation method for the entire BEOL-Process of IHP’s standard 0.25 and 0.13 μm SiGe:C BiCMOS technology. A dual lithography platform NIKON® NSR 210D/207D scanners and NIKON® NSR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7ec8285721f907cf485626b87bbaa93
https://doi.org/10.1117/12.2535629
https://doi.org/10.1117/12.2535629